NAKAMURA, Toshihiro Professor
| Graduate School | Human and Environmental Studies/Materials Science |
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| Undergraduate School | |
| Other Affiliation | Institute for Liberal Arts and Sciences |
| nakamura.toshihiro.5m(_at_)kyoto-u.ac.jp (Replace (_at_) with @.) | |
| Personal Page |
| Research areas | Thin film processing, Electronic materials and devices, Plasma chemistry, Molecular spectroscopy |
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| Keywords | Plasma processing, Oxide electronics, Resistance random access memory, Transparent conducting film, Dielectric barrier discharge |
| Themes | (1) Thin film deposition for electronic materials and devices (2) Plasma chemistry in materials synthesis |
| Major publications | (1) Sn-doping concentration dependence of electrical, optical, and magnetic properties in epitaxial Mn-doped indium tin oxide films deposited by RF magnetron sputtering S. Kitagawa and T. Nakamura, Journal of Vacuum Science & Technology A, 43(2), 023409-1-11 (2025). (2) Carrier concentration dependence of optical and magnetic properties in epitaxial manganese-doped indium tin oxide films with different manganese concentrations S. Kitagawa and T. Nakamura, Current Applied Physics, 69, 60-69 (2025). (3) Anomalous Carrier Enhancement with Lightly Mn Doping in Indium–Tin Oxide Thin Films Studied by Hard X-ray Photoemission Spectroscopy N. Tsutsumi, D. Ootsuki, T. Ishida, T. Yoshida, Y. Takeda, A. Yasui, S. Kitagawa, and T. Nakamura Journal of the Physical Society of Japan, 93, 104801-1-6 (2024). (4) Sputter epitaxy and characterization of manganese-doped indium tin oxide films with different crystallographic orientations S. Kitagawa and T. Nakamura Journal of Applied Physics, 134(16), 165302-1-11 (2023). (5) Effect of Mn substitution on the electronic structure for Mn-doped indium-tin oxide films studied by soft and hard x-ray photoemission spectroscopy D. Ootsuki, T. Ishida, N. Tsutsumi,M. Kobayashi, K. Inagaki, T. Yoshida, Y. Takeda, S. Fujimori, A. Yasui, S. Kitagawa, and T. Nakamura Physical Review Materials, 7(12), 124601-1-6 (2023). (6) Oxidation processes of NO for production of reactive nitrogen species in plasma activated water K. Tachibana, J. -S. Oh, and T. Nakamura Journal of Physics D: Applied Physics, 53(38), 385202-1-14 (2020). (7) Comparative study of discharge schemes for production rates and ratios of reactive oxygen and nitrogen species in plasma activated water K. Tachibana and T. Nakamura Journal of Physics D: Applied Physics, 52(38), 385202-1-17 (2019). (8) Local structure analysis of magnetic transparent conducting films by x-ray spectroscopy T. Nakamura Journal of Physics D: Applied Physics, 49(4), 045005-1-5 (2016). (9) Isotopic study on metalorganic chemical vapor deposition of manganite films T. Nakamura Surface & Coatings Technology, 230, 213-218 (2013). (10) Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films T. Nakamura, K. Homma, and K. Tachibana Nanoscale Research Letters, 8(1), 76-1-7 (2013). |
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